Ge
Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors, and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility.
The high-quality Ge substrates can be used in concentrated photovoltaic(CPV), outer-space solar-cell panel and high-bright light-emitting diode(LED) applications.CasCrysTech (CCT) provides high quality Germanium(Ge) crystals upon request from customers.
Uses/Applications
The high-quality Ge substrates can be used in concentrated photovoltaic(CPV), outer-space solar-cell panel and high-bright light-emitting diode(LED) applications.
Features/Benefits
Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors, and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility.
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Growth Method
Czochralski
Crystal Structure
Cubic
Lattice Constant
a=5.65754 Å
Density
5.323(g/cm3)
Melt Point
937.4℃
Doping Element
no
Sb
Ga
Type
/
N
P
Resistivity
＞35Ωcm
0.01~35 Ωcm
0.05~35 Ωcm
EPD
＜4×103∕cm2
＜4×103∕cm2
＜4×103∕cm2
Dimension
10x3mm，10x5mm，10x10mm，15x15mm，20x15mm，20x20mm，
Dia50.8 mm ,dia76.2mm, Dia100 mm
Thickness
0.5mm，1.0mm
Polishing
One side or two sides
Orientation
<100>、<110>、<111>、±0.5º
Crystal Plane Orientation Accuracy
±0.5°
Edge Orientation Accuracy
2°（Special requirements can reach within 1°）
Bevel Wafer
According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.
Surface Roughness
Ra≤5Å（5×5µm）
Package
Class 100 clean bag, Class 1000 super clean room
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Dimension
5x5mm，10x10mm，20x20mm，30x30mm , Ø50.8 mm
Thickness
0.5mm，1.0mm